Keyword : Ta2O5


Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
Hoon-Ki LEE S.V. Jagadeesh CHANDRA Kyu-Hwan SHIM Jong-Won YOON Chel-Jong CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 846-849
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Ta2O5MOSflat band voltageeffective metal workfunctionEOT
 Summary | Full Text:PDF(1MB)

Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11 ; pp. 1564-1581
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitordielectricsSi3N4Ta2O5high permittivity materials256 Mbit1 GbitDRAM
 Summary | Full Text:PDF(1.8MB)