Keyword : TDDB


A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5 ; pp. 402-405
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnesssacrificial oxidationTDDB
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Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidation1/f noiseTDDB
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Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels
Takashi ITO Xiaoli ZHU Shin-Ichiro KUROKI Koji KOTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/11/01
Vol. E93-C  No. 11 ; pp. 1638-1644
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
nanogratingcurrent driveeffective mobilityreliabilityTDDBNBTI
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Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors
Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 962-967
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
HfSiOxNymetal gateleakage currentcharge trappingTDDB
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Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide
Katsuya SHIGA Junko KOMORI Masafumi KATSUMATA Akinobu TERAMOTO Yoji MASHIKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 589-592
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
oxide reliabilityextrinsic oxide breakdownTDDBthin oxideactivation energy
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Test Structure for the Evaluation of Si Substrates
Yoshiko YOSHIDA Mikihiro KIMURA Morihiko KUME Hidekazu YAMAMOTO Hiroshi KOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 192-197
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: SOI & Material Characterization
Keyword: 
silicon substratecrystal defectTDDBtest structure
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A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
Yukiharu URAOKA Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 519-524
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
reliabilityphoton emissionTDDBgate oxideLOCOS
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