Keyword : TCAD


Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node
Yesung KANG Youngmin KIM 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2013/05/01
Vol. E96-A  No. 5 ; pp. 947-952
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
design for manufacturing (DFM)leakage savingnon-rectangular transistordevice modelTCADgate biasing
 Summary | Full Text:PDF(1.3MB)

TCAD Challenges for Heterostructure Microelectronics
Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1960-1967
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
TCADheterostructuredevice simulation
 Summary | Full Text:PDF(409.1KB)

Technology Modeling for Emerging SOI Devices
Meikei IEONG Phil OLDIGES 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 301-307
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
TCADdevice modelingsilicon-on-insulatorstrained-silicondouble-gate
 Summary | Full Text:PDF(487KB)

A Novel CDM-Like Discharge Effect during Human Body Model (HBM) ESD Stress
Valery AXELRAD Yoon HUH Jau-Wen CHEN Peter BENDIX 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 398-403
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
HBMESD protectionTCADmixed-mode circuit
 Summary | Full Text:PDF(316KB)

Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry
Boon-Khim LIEW Chih-Chiang WANG Carlos H. DIAZ Shien-Yang WU Jack Yuan-Chen SUN Yai-Fen LIN Di-Son KUO Hua-Tai LIN Anthony YEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1275-1280
Type of Manuscript:  INVITED PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Simulation Methodology and Environment
Keyword: 
TCADCMOS deviceflashoptical proximity correction
 Summary | Full Text:PDF(1.4MB)

A Design Hierarchy of IC Interconnects and Gate Patterns
Shinji ODANAKA Akio MISAKA Kyoji YAMASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 948-954
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADinterconnectOPCgate patterndesign rule
 Summary | Full Text:PDF(950.2KB)

TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
 Summary | Full Text:PDF(482.5KB)

TCAD Needs and Applications from a User's Perspective
Michael DUANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 976-982
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADprocess and device modelingmanufacturingpredictive calibration
 Summary | Full Text:PDF(293.6KB)

Equipment Simulation of Production Reactors for Silicon Device Fabrication
Christoph WERNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 992-996
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
equipment simulationCVD reactorchemical vapor depositionTCADcomputer modelingcomputational fluid dynamicssilicon devicesVLSI
 Summary | Full Text:PDF(3.1MB)

A New Hierarchical RSM for TCAD-Based Device Design in 0.4µm CMOS Development
Hisako SATO Katsumi TSUNENO Kimiko AOYAMA Takahide NAKAMURA Hisaaki KUNITOMO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 226-233
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Statistical Analysis
Keyword: 
TCADRSMCMOS design
 Summary | Full Text:PDF(742.5KB)

A Unified Model for the Simulation of Small-Geometry Devices
Anna PIERANTONI Paolo CIAMPOLINI Andrea LIUZZO Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 139-147
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
TCADdevice simulationhot-electron effectselectro-thermal effects
 Summary | Full Text:PDF(770.8KB)

Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 181-188
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
TCADdevice simulationhot-electron effectsrecessed-oxide MOSFETs
 Summary | Full Text:PDF(754.9KB)

An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion
Davide VENTURA Antonio GNUDI Giorgo BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 194-199
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
TCADBTEhot-electron effectselectron energy distribution
 Summary | Full Text:PDF(468.9KB)