IEICE Trans

Keyword : TCAD

Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node Yesung KANG Youngmin KIM
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2013/05/01 Vol. E96-A No. 5 ; pp. 947-952 Type of Manuscript: PAPER Category: VLSI Design Technology and CAD Keyword: design for manufacturing (DFM), leakage saving, non-rectangular transistor, device model, TCAD, gate biasing,
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TCAD Challenges for Heterostructure Microelectronics Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1960-1967 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: TCAD, heterostructure, device simulation,
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Technology Modeling for Emerging SOI Devices Meikei IEONG Phil OLDIGES
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 301-307 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: TCAD, device modeling, silicon-on-insulator, strained-silicon, double-gate,
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A Novel CDM-Like Discharge Effect during Human Body Model (HBM) ESD Stress Valery AXELRAD Yoon HUH Jau-Wen CHEN Peter BENDIX
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 398-403 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: HBM, ESD protection, TCAD, mixed-mode circuit,
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Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry Boon-Khim LIEW Chih-Chiang WANG Carlos H. DIAZ Shien-Yang WU Jack Yuan-Chen SUN Yai-Fen LIN Di-Son KUO Hua-Tai LIN Anthony YEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1275-1280 Type of Manuscript: INVITED PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Simulation Methodology and Environment Keyword: TCAD, CMOS device, flash, optical proximity correction,
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A Design Hierarchy of IC Interconnects and Gate Patterns Shinji ODANAKA Akio MISAKA Kyoji YAMASHITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 948-954 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: TCAD, interconnect, OPC, gate pattern, design rule,
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TCAD--Yesterday, Today and Tomorrow Robert W. DUTTON
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 791-799 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena,
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TCAD Needs and Applications from a User's Perspective Michael DUANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 976-982 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: TCAD, process and device modeling, manufacturing, predictive calibration,
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Equipment Simulation of Production Reactors for Silicon Device Fabrication Christoph WERNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 992-996 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: equipment simulation, CVD reactor, chemical vapor deposition, TCAD, computer modeling, computational fluid dynamics, silicon devices, VLSI,
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A New Hierarchical RSM for TCAD-Based Device Design in 0.4µm CMOS Development Hisako SATO Katsumi TSUNENO Kimiko AOYAMA Takahide NAKAMURA Hisaaki KUNITOMO Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-C No. 2 ; pp. 226-233 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Statistical Analysis Keyword: TCAD, RSM, CMOS design,
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A Unified Model for the Simulation of Small-Geometry Devices Anna PIERANTONI Paolo CIAMPOLINI Andrea LIUZZO Giorgio BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 139-147 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Device Modeling Keyword: TCAD, device simulation, hot-electron effects, electro-thermal effects,
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Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 181-188 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: TCAD, device simulation, hot-electron effects, recessed-oxide MOSFETs,
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An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion Davide VENTURA Antonio GNUDI Giorgo BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 194-199 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: TCAD, BTE, hot-electron effects, electron energy distribution,
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