Keyword : SrBi2Ta2O9


Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Norimasa NUKAGA Masatoshi MITSUYA Hiroshi FUNAKUBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 791-795
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
SrBi2Ta2O9metalorganic chemical vapor deposition (MOCVD)chemical stabilityAr sputterepitaxial film
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Nanoscale Investigation of Piezo and Leakage Defects in SBT Film by SPM
Mami SAITO Kumi OKUWADA Soichi NADAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 802-807
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
AFMpiezo imageleakage current imageSrBi2Ta2O9sol-gel method
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SrBi2Ta2O9 Thin Films Fabricated by Sol-Gel Method with IrO2 Electrodes
Yukihisa OKADA Ichiro KOIWA Kinya ASHIKAGA Katsuaki KAIFU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 560-565
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
SrBi2Ta2O9IrO2 electrodesmetal-alkoxidessol-gelmixcomplexhydrolysisclosely packed structure
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Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricMFSFETSrBi2Ta2O9Si non-volatile memorymemory
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