Keyword : SiON/Poly-Si Gate


Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 724-729
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1/f noiseflicker noiseMOSFETSiON/Poly-Si GateRandom Telegraph Signal (RTS)
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