IEICE Trans

Keyword : SiO₂

Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO₂ Thin-Film Growth Using Density Functional Theory Seung-Bin BAEK Dae-Hee KIM Yeong-Cheol KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 771-774 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: atomic layer deposition, Bis-diethylaminosilane, density functional theory, SiO₂,
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Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 ; pp. 955-961 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: SILC, stress-induced leakage current, SiO₂, ultra thin silicon dioxide, mean-free-path, O vacancy model,
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Influence of Silicone Vapor on Micro-Motor Reliability Terutaka TAMAI Kiyoshi OGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/06/01 Vol. E86-C No. 6 ; pp. 885-890 Type of Manuscript: Special Section PAPER (Special Issue on Recent Development of Electro-Mechanical Devices (IS-EMD 2002)) Category: Contact Phenomena Keyword: silicone vapor, micro-motor, contamination, reliability, SiO₂,
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Improvements of Crystal Orientations of Wurtzite-Type GaN Thin Films Grown on Metal Surfaces Yuichi SATO Toshifumi HISHINUMA Susumu SATO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/06/01 Vol. E86-C No. 6 ; pp. 1002-1006 Type of Manuscript: Special Section PAPER (Special Issue on Recent Development of Electro-Mechanical Devices (IS-EMD 2002)) Category: Emerging Technologies Keyword: wurtzite structure, GaN, metal-foil, intermediate layer, SiO₂,
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Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O₂ Gases Yukihiko NAKATA Tetsuya OKAMOTO Toshimasa HAMADA Takashi ITOGA Yutaka ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/11/01 Vol. E85-C No. 11 ; pp. 1849-1853 Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays) Category: Active Matrix Displays Keyword: oxidation, poly-Si, TFT, gate insulator, SiO₂,
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Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO₂ Toshihiro MATSUDA Masaharu KAWABE Hideyuki IWATA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/11/01 Vol. E85-C No. 11 ; pp. 1895-1904 Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays) Category: EL Displays Keyword: MOS capacitor, electroluminescence, Si-implantation, SiO₂,
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Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays Terutaka TAMAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/09/25 Vol. E83-C No. 9 ; pp. 1402-1408 Type of Manuscript: Special Section PAPER (Special Issue on Current Electromechanical Devices and Their Materials with Recent Innovations) Category: Keyword: silicone contamination, contact resistance, adsorbed silicone molecule, switching rate, SiO₂,
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Peculiar Patterns of SiO₂ Contamination on the Contact Surface of a Micro Relay Operated in a Silicone Vapor Environment Terutaka TAMAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/01/25 Vol. E82-C No. 1 ; pp. 81-85 Type of Manuscript: Special Section LETTER (Special Issue on Electromechanical Devices and Their Materials) Category: Keyword: electric contact, silicone contamination, SiO₂, contact failure, contamination pattern,
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A Novel Electron Beam Resist System Convertible into Silicate Glass Toshio ITO Miwa SAKATA Maki KOSUGE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/25 Vol. E76-C No. 4 ; pp. 588-593 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Process Technology Keyword: electron beam resist, glass, poly (siloxane), SiO₂, O₂-RIE,
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Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique Takashi FUYUKI Takeshi FURUKAWA Tohru OKA Hiroyuki MATSUNAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 1013-1018 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: remote plasma CVD, SiO₂,
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The Effect of Chemical Cleaning on Bulk Traps in Dry Gate Oxide Hidetsugu UCHIDA Norio HIRASHITA Tsuneo AJIOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 790-795 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: hole trap, electron trap, chemical cleaning, SiO₂, avalanche injection,
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