Keyword : SiN


An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memoryMONOSSiNfirst principles calculationcharge trap memory
 Summary | Full Text:PDF(1.1MB)

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 686-690
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlGaN/GaN HEMTscurrent collapseSiNpassivation filmthermal CVD
 Summary | Full Text:PDF(949.9KB)

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels
Shun-ichiro OHMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 994-999
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
twin-channelself-alignSOIΩ-gateSiNwet etching
 Summary | Full Text:PDF(1.6MB)