IEICE Trans

Keyword : SiGe

Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si_1-xGe_x Veerappan MANIMUTHU Muthusamy OMPRAKASH Mukannan ARIVANANDHAN Faiz SALLEH Yasuhiro HAYAKAWA Hiroya IKEDA
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 ; pp. 482-485 Type of Manuscript: BRIEF PAPER Category: Keyword: SiGe, thermoelectrics, Seebeck coefficient, phonon drag,
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High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility Jungwoo OH Jeff HUANG Injo OK Se-Hoon LEE Paul D. KIRSCH Raj JAMMY Hi-Deok LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 712-716 Type of Manuscript: INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high transport, SiGe, orientation, strain, heterostructure,
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A 2 to 5 GHz-Band Self Frequency Dividing Quadrature Mixer Using Current Re-Use Configuration Eiji TANIGUCHI Mitsuhiro SHIMOZAWA Noriharu SUEMATSU
Publication: IEICE TRANSACTIONS on Communications Publication Date: 2009/12/01 Vol. E92-B No. 12 ; pp. 3711-3716 Type of Manuscript: Special Section PAPER (Special Section on Dynamic Spectrum Access) Category: Wideband RF Systems Keyword: Si, SiGe, MMIC, RFIC, mixer, converter, direct conversion receiver, cognitive radio,
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Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films A-Ram CHOI Sang-Sik CHOI Byung-Guan PARK Dongwoo SUH Gyungock KIM Jin-Tae KIM Jin-Soo CHOI Deok-Ho CHO Tae-Hyun HAN Kyu-Hwan SHIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 ; pp. 767-771 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SiGe, SEG, aspect ratio, RPCVD,
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Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_0.88Ge_0.12 Heterostructure Channel Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 ; pp. 716-720 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SiGe, MOSFET, PD SOI, stress effect,
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A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs Satoshi KURACHI Toshihiko YOSHIMASU Haiwen LIU Nobuyuki ITOH Koji YONEMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/06/01 Vol. E90-C No. 6 ; pp. 1228-1233 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: SiGe, VCO, resonant circuit, VCO gain, 5-GHz-band, WLAN,
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Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_0.7Ge_0.3 Virtual Substrates Mathieu STOFFEL Jing ZHANG Oliver G. SCHMIDT
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 921-925 Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Keyword: SiGe, interband tunneling diodes, negative differential resistance, SiGe relaxed buffers,
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A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology Tzung-Han WU Chinchun MENG Tse-Hung WU Guo-Wei HUANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/06/01 Vol. E88-C No. 6 ; pp. 1267-1270 Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies) Category: RF Keyword: SiGe, HBT, Gilbert mixer,
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Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications Takashi YAMAZAKI Shun-ichiro OHMI Shinya MORITA Hiroyuki OHRI Junichi MUROTA Masao SAKURABA Hiroo OMI Tetsushi SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 ; pp. 656-661 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: silicon on insulator (SOI) wafer, patterned SOI, SiGe, selective etching, MOSFET,
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High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation Kun-Ming CHEN Guo-Wei HUANG Li-Hsin CHANG Hua-Chou TSENG Tsun-Lai HSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/05/01 Vol. E87-C No. 5 ; pp. 720-725 Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits) Category: Active Devices and Circuits Keyword: high-frequency, SiGe, heterojunction bipolar transistor, pulsed measurement, self-heating effect,
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The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers Akira INOUE Shigenori NAKATSUKA Takahide ISHIKAWA Yoshio MATSUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/05/01 Vol. E87-C No. 5 ; pp. 714-719 Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits) Category: Active Devices and Circuits Keyword: maximum operating region, measurement, waveform, SiGe, power amplifier, HBT,
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Terahertz Time Domain Spectroscopy of Epitaxially Grown Silicon Germanium Jimpei TABATA Kouichi HIRANAKA Tohru SAITOH Takeshi NAGASHIMA Masanori HANGYO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1994-1999 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: terahertz, SiGe, conductivity, spectroscopy,
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A 38% Tuning Range 6-GHz Fully Integrated VCO Nobuyuki ITOH Shin-ichiro ISHIZUKA Kazuhiro KATOH Yutaka SHIMIZU Koji YONEMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/08/01 Vol. E85-C No. 8 ; pp. 1604-1606 Type of Manuscript: Special Section LETTER (Special Issue on High-Performance Analog Integrated Circuits) Category: Keyword: fully integrated VCO, SiGe, 6 GHz, high tuning range,
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1200-MHz Fully Integrated VCO with "Turbo-Charger" Technique Nobuyuki ITOH Shin-ichiro ISHIZUKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/08/01 Vol. E85-C No. 8 ; pp. 1569-1576 Type of Manuscript: Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits) Category: Keyword: fully integrated VCO, SiGe, BiCMOS, phase noise,
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A 2 GHz-Band Even Harmonic Type SiGe-MMIC Direct Conversion CECCTP Mixer Eiji TANIGUCHI Kenichi MAEDA Chiemi SAWAUMI Noriharu SUEMATSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/07/01 Vol. E85-C No. 7 ; pp. 1412-1418 Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies) Category: Keyword: microwave, mixer, heterojunction bipolar transistor (HBT), SiGe,
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Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit Shintaro SHINJO Kazutomi MORI Hiroyuki JOBA Noriharu SUEMATSU Tadashi TAKAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/07/01 Vol. E85-C No. 7 ; pp. 1404-1411 Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies) Category: Keyword: microwave, power amplifier, heterojunction bipolar transistor (HBT), SiGe, bias circuit,
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SiGe-HBTs for Bipolar and BICMOS-Applications: From Research to Ramp up of Production Konrad WOLF Wolfgang KLEIN Norbert ELBEL Adrian BERTHOLD Sonja GRONDAHL Thomas HUTTNER Stefan DREXL Rudolf LACHNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1399-1407 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: SiGe, selective epitaxy, bipolar, BICMOS,
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Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures Tomohisa MIZUNO Naoharu SUGIYAMA Atsushi KUROBE Shin-ichi TAKAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1423-1430 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: strained-Si, SOI, SiGe, SIMOX, mobility,
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SiGe Hetero-FETs Potential for Micropower Applications Christos PAPAVASSILIOU Kristel FOBELETS Chris TOUMAZOU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1414-1422 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: SiGe, HFET, HMOS, micropower, subthreshold,
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MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs) Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1408-1413 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: SiGe, GaAs, HBT, power amplifier, MMIC,
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Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics Shin-ichi TAKAGI Tomohisa MIZUNO Naoharu SUGIYAMA Tsutomu TEZUKA Atsushi KUROBE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/08/01 Vol. E84-C No. 8 ; pp. 1043-1050 Type of Manuscript: INVITED PAPER (Special Issue on Silicon Nanodevices) Category: Keyword: CMOS, SOI, mobility, strain, SiGe,
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