Keyword : SiGe HBT


PCB-Based Cross-Coupled Differential VCOs Using a Novel LC-Tank Comprised of the Chip Inductors
Hikaru IKEDA Yasushi ITOH 
Publication:   
Publication Date: 2018/10/01
Vol. E101-C  No. 10 ; pp. 744-750
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
microwavedifferentialcross-coupledVCOLC-tankSiGe HBT
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L-Band SiGe HBT Frequency-Tunable Dual-Bandpass or Dual-Bandstop Differential Amplifiers Using Varactor-Loaded Series and Parallel LC Resonators
Kazuyoshi SAKAMOTO Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/12/01
Vol. E95-C  No. 12 ; pp. 1839-1845
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
amplifierdifferentialmicrowavefrequency-tunableSiGe HBTvaractorLC-resonatordual-band
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An L-Band 4-Bit RL/RC-Switched Active Phase Shifter Using Differential Switches
Kenji NAKAMURA Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C  No. 9 ; pp. 1170-1175
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category: 
Keyword: 
phase shifterdifferentialmicrowaveswitchSiGe HBT
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A High-Q Active Inductor Circuit for Quasi-Millimeter-Wave Frequency Range
Toru MASUDA Yukio HATTORI Hiroki SHIKAMA Akira HYOGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/06/01
Vol. E91-C  No. 6 ; pp. 862-870
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
active inductoroperational transconductor amplifierSiGe HBT
 Summary | Full Text:PDF | Errata[Uploaded on July 1,2008]

High Efficiency Open Collector Adaptive Bias SiGe HBT Differential Power Amplifier
Kuei-Cheng LIN Tsung-Yu YANG Kuan-Yu CHEN Hwann-Kaeo CHIOU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/11/01
Vol. E89-C  No. 11 ; pp. 1704-1707
Type of Manuscript:  LETTER
Category: Microwaves, Millimeter-Waves
Keyword: 
open collector linearizerSiGe HBTadaptive bias amplifierW-CDMA
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Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4 ; pp. 455-465
Type of Manuscript:  Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistorSiGe HBTSiGe:Cpower amplifierACPRPAE
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Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector
Toshinobu MATSUNO Atsuhiko KANDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2022-2026
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
SiGe HBTpower amplifierselectively ion implanted collectorcollector break down voltage
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DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA Eiji OHUE Masamichi TANABE Hiromi SHIMAMOTO Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 2013-2020
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBTUHV/CVDselective epitaxial growthGe profilecurrent gaincutoff frequency
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Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 526-530
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistorSiGe HBTdoping level inversioncutoff frequencyselective epitaxy
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A High-Speed 6-Bit ADC Using SiGe HBT
Haruo KOBAYASHI Toshiya MIZUTA Kenji UCHIDA Hiroyuki MATSUURA Akira MIURA Tsuyoshi YAKIHARA Sadaharu OKA Daisuke MURATA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/03/25
Vol. E81-A  No. 3 ; pp. 389-397
Type of Manuscript:  Special Section PAPER (Special Section of Selected Papers from the 10th Karuizawa Workshop on Circuits and Systems)
Category: 
Keyword: 
A/D converterfolding/interpolationanalog circuitSiGe HBTmodeling
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