Keyword : Si-implantation


Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1523-1530
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitorsSi-implantationthermal oxideI-V hysteresishysteresis windownonvolatile memory
 Summary | Full Text:PDF(1.7MB)

Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO2
Toshihiro MATSUDA Masaharu KAWABE Hideyuki IWATA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11 ; pp. 1895-1904
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: EL Displays
Keyword: 
MOS capacitorelectroluminescenceSi-implantationSiO2
 Summary | Full Text:PDF(1.3MB)

C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2
Takashi OHZONE Takashi HORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/06/25
Vol. E77-C  No. 6 ; pp. 952-959
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
MOSFETSi-implantationEEPROM
 Summary | Full Text:PDF(684.1KB)