Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3 ;
pp. 385-390
Type of Manuscript:
Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
device simulation, DGSOI MOSFET, channel mobility, quantum effects, Schrodinger-Poisson solver, |