Keyword : Schrodinger-Poisson solver


Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationDGSOI MOSFETchannel mobilityquantum effectsSchrodinger-Poisson solver
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