Keyword : Schottky diode


DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium NitrideSchottky diodevaractormultiplier
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P3HT/n--Si Heterojunction Diodes and Photovoltaic Devices Investigated by I-V and C-V Measurements
Naoki OYAMA Sho KANEKO Katsuaki MOMIYAMA Fumihiko HIROSE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/12/01
Vol. E94-C  No. 12 ; pp. 1838-1844
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Organoelectronic Materials and Their Applications for Nanotechnology)
Category: 
Keyword: 
flexible electronicsheterojunctionSchottky diodepoly(3-hexylthiophene)
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P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements
Fumihiko HIROSE Yasuo KIMURA Michio NIWANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1475-1478
Type of Manuscript:  Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Fundamentals for Nanodevices
Keyword: 
flexible electronicsheterojunctionSchottky diodepoly(3-hexylthiophene)
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Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1037-1041
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNpressure sensorHEMTSchottky diode
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A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2027-2031
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNgas sensorSchottky diodesensitivity
 Summary | Full Text:PDF