Keyword : SONOS


SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition
Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 590-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
SONOSSOHOSflash memoryhigh-kHfO2nonvolatile memoryAtomic Layer Deposition
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Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
Hyun Woo KIM Dong Hun KIM Joo Hyung YOU Tae Whan KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 651-653
Type of Manuscript:  BRIEF PAPER
Category: Memory Devices
Keyword: 
SANOSSONOScharge transportsilicon nitridestacked tunneling layer
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Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SONOSflash memorynitride-based charge trap memoryretentionmulti-bitdouble gate
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Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
Han-A-Reum JUNG Kyoung-Rok HAN Young-Min KIM Jong-Ho LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 736-741
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
saddleSONOSside-gaterecess channelDIBL
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Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate
Kuk-Hwan KIM Hyunjin LEE Yang-Kyu CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 578-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
MONOSSONOSFowler-Nordheim tunnelingflash memoryasymmetric double gatenonvolatile memory
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