Keyword : SOI-DRAM

Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM
Fukashi MORISHITA Yasuo YAMAGUCHI Takahisa EIMORI Toshiyuki OASHI Kazutami ARIMOTO Yasuo INOUE Tadashi NISHIMURA Michihiro YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 544-552
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
SOI-DRAM, floating body, high speed, low power, data retention characteristics, 
 Summary | Full Text:PDF
A Long Data Retention SOI DRAM with the Body Refresh Function
Shigeki TOMISHIMA Fukashi MORISHITA Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 899-904
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
memory, SOI-DRAM, body region, refresh, data retention, 
 Summary | Full Text:PDF
Circuit Technology for Giga-bit/Low Voltage Operating SOI-DRAM
Akihiko YASUOKA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 436-442
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Circuit Technologies and Applications
Keyword: 
low voltage operation, SOI-DRAM, body control, long data retention time, high speed, 
 Summary | Full Text:PDF