Keyword : SOI


Analysis of Optical Output Characteristics in Waveguide Coupled HCG-VCSELs
Yoshihiro TSUNEMI Kazuhiro IKEDA Hitoshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C  No. 4 ; pp. 369-376
Type of Manuscript:  PAPER
Category: Lasers, Quantum Electronics
Keyword: 
HCGVCSELcoupling efficiencyFDTDSOI
 Summary | Full Text:PDF(2.4MB)

High-Frequency Precise Characterization of Intrinsic FinFET Channel
Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4 ; pp. 752-760
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
FinFETSOIDe-embeddingRFdevice modeling
 Summary | Full Text:PDF(2.2MB)

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Novel Integration Technology
Keyword: 
heterogeneous integrationfluidic self-assemblyHEMTSPDT switchSOI
 Summary | Full Text:PDF(1.5MB)

Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator
Dong Uk LEE Seon Pil KIM Tae Hee LEE Eun Kyu KIM Hyun-Mo KOO Won-Ju CHO Young-Ho KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 747-750
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
In2O3memorySOInano-particlesnonvolatile
 Summary | Full Text:PDF(714.3KB)

A PVT Tolerant STM-16 Clock-and-Data Recovery LSI Using an On-Chip Loop-Gain Variation Compensation Architecture in 0.20-µm CMOS/SOI
Yusuke OHTOMO Hiroshi KOIZUMI Kazuyoshi NISHIMURA Masafumi NOGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4 ; pp. 655-661
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
LSICDRCMOSSOIjitter
 Summary | Full Text:PDF(1.6MB)

Recent Progresses of Si-Based Photonics in Chinese Main Land
Jinzhong YU Qiming WANG Buwen CHENG Saowu CHEN Yuhua ZUO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C  No. 2 ; pp. 150-155
Type of Manuscript:  INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
nanocrystalsPLquantum dotSOIoptical switch matrixphotodiodes
 Summary | Full Text:PDF(525.4KB)

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels
Shun-ichiro OHMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 994-999
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
twin-channelself-alignSOIΩ-gateSiNwet etching
 Summary | Full Text:PDF(1.6MB)

A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI
Fukashi MORISHITA Hideyuki NODA Isamu HAYASHI Takayuki GYOHTEN Mako OKAMOTO Takashi IPPOSHI Shigeto MAEGAWA Katsumi DOSAKA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 765-771
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Memory
Keyword: 
SOIcapacitorlessDRAMlow powerdata retention
 Summary | Full Text:PDF(932.3KB)

Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations
Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 836-841
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: 
Keyword: 
SOIbody factorbody effectFinFETmultigate MOSFET
 Summary | Full Text:PDF(1.3MB)

A 1-V 2.4-GHz Downconverter for FSK Wireless Applications with a Complex BPF and a Frequency Doubler in CMOS/SOI
Mamoru UGAJIN Junichi KODATE Tsuneo TSUKAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 888-894
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
RFFSK downconverterCMOSSOIcomplex BPFfrequency doubler
 Summary | Full Text:PDF(916.8KB)

A Low-Power Microcontroller with Body-Tied SOI Technology
Hisakazu SATO Yasuhiro NUNOMURA Niichi ITOH Koji NII Kanako YOSHIDA Hironobu ITO Jingo NAKANISHI Hidehiro TAKATA Yasunobu NAKASE Hiroshi MAKINO Akira YAMADA Takahiko ARAKAWA Toru SHIMIZU Yuichi HIRANO Takashi IPPOSHI Shuhei IWADE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4 ; pp. 563-570
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
low powerhigh speedmicrocontrollerSOI
 Summary | Full Text:PDF(1.3MB)

Photonic-Band-Gap Waveguides and Resonators in SOI Photonic Crystal Slabs
Masaya NOTOMI Akihiko SHINYA Eiichi KURAMOCHI Satoshi MITSUGI Han-Youl RYU Tatsuro KAWABATA Tai TSUCHIZAWA Toshifumi WATANABE Tetsufumi SHOJI Koji YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/03/01
Vol. E87-C  No. 3 ; pp. 398-408
Type of Manuscript:  Special Section PAPER (Special Section on Photonic Crystals and Their Device Applications)
Category: 
Keyword: 
photonic crystalphotonic band gapwaveguideresonatorSOI
 Summary | Full Text:PDF(2.3MB)

Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
Junichi KODATE Mamoru UGAJIN Tsuneo TSUKAHARA Takakuni DOUSEKI Nobuhiko SATO Takehito OKABE Kazuaki OHMI Takao YONEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1041-1049
Type of Manuscript:  Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
RFICCMOSLNAsilicon-on-insulatorSOI
 Summary | Full Text:PDF(899.9KB)

A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI
Mamoru UGAJIN Kenji SUZUKI Tsuneo TSUKAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/08/01
Vol. E85-C  No. 8 ; pp. 1588-1595
Type of Manuscript:  Special Section PAPER (Special Issue on High-Performance Analog Integrated Circuits)
Category: 
Keyword: 
voltage referenceCMOSlow voltageSOI
 Summary | Full Text:PDF(819.1KB)

A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance
Mitsuo NAKAMURA Hideki SHIMA Toshimasa MATSUOKA Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1428-1435
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
voltage controlled oscillatorwireless communicationCMOSSOIdouble-tuning
 Summary | Full Text:PDF(1.1MB)

Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption
Shin-ichi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1064-1072
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
inversion layermobilitysubbandstrained-SiSOI
 Summary | Full Text:PDF(694.4KB)

Low Loss Ultra-Small Branches in a Silicon Photonic Wire Waveguide
Atsushi SAKAI Tatsuhiko FUKAZAWA Toshihiko BABA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/04/01
Vol. E85-C  No. 4 ; pp. 1033-1038
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress of Integrated Photonic Devices)
Category: New Devices
Keyword: 
integrated opticsoptical waveguidebranch circuitSOIFDTD
 Summary | Full Text:PDF(388.5KB)

A 1-V 2-GHz RF Receiver with 49 dB of Image Rejection in CMOS/SIMOX
Mamoru UGAJIN Junichi KODATE Tsuneo TSUKAHARA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/02/01
Vol. E85-A  No. 2 ; pp. 293-299
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
image rejectionCMOSlow voltageSOIRF
 Summary | Full Text:PDF(873.4KB)

Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application
Yasuo YAMAGUCHI Takashi IPPOSHI Kimio UEDA Koichiro MASHIKO Shigeto MAEGAWA Masahide INUISHI Tadashi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/12/01
Vol. E84-C  No. 12 ; pp. 1735-1745
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Systems with New Concepts)
Category: 
Keyword: 
SOISOCpartially depletedisolation
 Summary | Full Text:PDF(1.8MB)

Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures
Tomohisa MIZUNO Naoharu SUGIYAMA Atsushi KUROBE Shin-ichi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1423-1430
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
strained-SiSOISiGeSIMOXmobility
 Summary | Full Text:PDF(739.6KB)

Strained-Si-on-Insulator (Strained-SOI) MOSFETs--Concept, Structures and Device Characteristics
Shin-ichi TAKAGI Tomohisa MIZUNO Naoharu SUGIYAMA Tsutomu TEZUKA Atsushi KUROBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1043-1050
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
CMOSSOImobilitystrainSiGe
 Summary | Full Text:PDF(1.6MB)

Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
Fukashi MORISHITA Kazutami ARIMOTO Kazuyasu FUJISHIMA Hideyuki OZAKI Tsutomu YOSHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2 ; pp. 253-259
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SOIfloating bodybody controlhigh speedlow power
 Summary | Full Text:PDF(497.4KB)

200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltageCMOS transistorelectric field relaxationSOIintrinsic layer
 Summary | Full Text:PDF(2.5MB)

A CAD-Compatible SOI-CMOS Gate Array Using 0.35µm Partially-Depleted Transistors
Kimio UEDA Koji NII Yoshiki WADA Shigenobu MAEDA Toshiaki IWAMATSU Yasuo YAMAGUCHI Takashi IPPOSHI Shigeto MAEGAWA Koichiro MASHIKO Yasutaka HORIBA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C  No. 2 ; pp. 205-211
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
SOICMOSfield-shield isolationgate arraylow-powerhigh-speed
 Summary | Full Text:PDF(2MB)

Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
Toshiro HIRAMOTO Makoto TAKAMIYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C  No. 2 ; pp. 161-169
Type of Manuscript:  INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
MOSFETlow powerlow voltagevariable threshold voltageback-biasbody effectDTMOSSOI
 Summary | Full Text:PDF(887.3KB)

Energy-Reduction Effect of Ultralow-Voltage MTCMOS/SIMOX Circuits Using a Graph with Equispeed and Equienergy Lines
Takakuni DOUSEKI Toshishige SHIMAMURA Koji FUJII Junzo YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/02/25
Vol. E83-C  No. 2 ; pp. 212-219
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Category: 
Keyword: 
ultralow-voltage circuitmulti-threshold CMOSSIMOXSOI
 Summary | Full Text:PDF(1.4MB)

Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's
Shigeru KAWANAKA Shinji ONGA Takako OKADA Michihiro OOSE Toshihiko IINUMA Tomoaki SHINO Takashi YAMADA Makoto YOSHIMI Shigeyoshi WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1341-1346
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SOILOCOS isolationcrystal defectleakage currentstress
 Summary | Full Text:PDF(2.3MB)

New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure
Yoichi TAMAKI Takashi HASHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 612-617
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
isolation capacitanceSOIbipolar transistortrench structure
 Summary | Full Text:PDF(427.2KB)

Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology
Mitsuru HARADA Tsuneo TSUKAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 553-558
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
CMOSSOIRFLNA
 Summary | Full Text:PDF(676.1KB)

High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage
Tetsu TANAKA Youichi MOMIYAMA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 538-543
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
SOIDTMOSFtFmaxlow power
 Summary | Full Text:PDF(709.9KB)

Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy
Masahito KODAMA Tsutomu UESUGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/25
Vol. E81-C  No. 9 ; pp. 1505-1507
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
power MOS FETLATERALSPESOItemperature characteristic
 Summary | Full Text:PDF(228.5KB)

A 40-Gb/s 88 ATM Switch LSI Using 0. 25-µmCMOS/SIMOX
Yusuke OHTOMO Sadayuki YASUDA Masafumi NOGAWA Jun-ichi INOUE Kimihiro YAMAKOSHI Hirotoshi SAWADA Masayuki INO Shigeki HINO Yasuhiro SATO Yuichiro TAKEI Takumi WATANABE Ken TAKEYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/05/25
Vol. E81-C  No. 5 ; pp. 737-745
Type of Manuscript:  Special Section PAPER (Special Issue on Multimedia, Network, and DRAM LSIs)
Category: Network
Keyword: 
SOICMOSATMhigh-speed
 Summary | Full Text:PDF(986.3KB)

Low-Power and High-Speed LSIs Using 0.25-µm CMOS/SIMOX
Masayuki INO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1532-1538
Type of Manuscript:  INVITED PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
CMOSSOISIMOXgate arrayATM switch
 Summary | Full Text:PDF(601.8KB)

Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH Tohru MOGAMI Haruo KATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 893-898
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SOIMOSFETfloating body effectsimulationapplicable voltage
 Summary | Full Text:PDF(491.5KB)

An Ultra Low Voltage SOI CMOS Pass-Gate Logic
Tsuneaki FUSE Yukihito OOWAKI Mamoru TERAUCHI Shigeyoshi WATANABE Makoto YOSHIMI Kazunori OHUCHI Jun'ichi MATSUNAGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 472-477
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOI0.5 V operationultra low voltagepass-gate logicbody-bias control
 Summary | Full Text:PDF(545.6KB)

Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts
Yasuhisa OMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 394-406
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
Keyword: 
SOISIMOXMOSFETdown-scalingultra-thin
 Summary | Full Text:PDF(984.7KB)

An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems
Alberto O. ADAN Toshio NAKA Seiji KANEKO Daizo URABE Kenichi HIGASHI Yasumori FUKUSHIMA Soshu TAKAMATSU Shogo HIDESHIMA Atsushi KAGISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 407-416
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOISIMOXCMOSlow-powerhigh-speed
 Summary | Full Text:PDF(901.1KB)

SMART-CUT(R): The Basic Fabrication Process for UNIBOND(R) SOI Wafers
A.J. AUBERTON-HERVE Michel BRUEL Bernard ASPAR Christophe MALEVILLE Hubert MORICEAU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 358-363
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
SOIUNIBOND(R)Smart-Cut(R)wafer bonding
 Summary | Full Text:PDF(875.1KB)

High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 364-369
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
SOISIMOXannealingoxidationSi
 Summary | Full Text:PDF(487.1KB)

Physical Modeling Needed for Reliable SOI Circuit Design
Jerry G. FOSSUM Srinath KRISHNAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 388-393
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
Keyword: 
SOIcompact modelscircuit simulationfloating-body
 Summary | Full Text:PDF(517.9KB)

Analysis of Self-Heating in SOI High Voltage MOS Transistor
Hitoshi YAMAGUCHI Hiroaki HIMI Shigeyuki AKITA Toshiyuki MORISHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 423-430
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOIhigh voltageself-heatingtemperature-riseelectrothermal simulation
 Summary | Full Text:PDF(614.5KB)

Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer
Satoshi MATSUMOTO Toshiaki YACHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 431-435
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOIpower MOSFETparasitic bipolar effectemission microscopy
 Summary | Full Text:PDF(417.3KB)

The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications
Yuichi KADO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 443-454
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Circuit Technologies and Applications
Keyword: 
CMOSSOISIMOXlow voltagelow power
 Summary | Full Text:PDF(898.5KB)

A Fully Depleted CMOS/SIMOX LSI Scheme Using a LVTTL-Compatible and Over-2, 000-V ESD-Hardness I/O Circuit for Reduction in Active and Static Power Consumption
Yusuke OHTOMO Takeshi MIZUSAWA Kazuyoshi NISHIMURA Hirotoshi SAWADA Masayuki INO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 455-463
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
CMOSSOIlow voltageLVTTL-compatibleESD
 Summary | Full Text:PDF(754.5KB)

Analysis of the Delay Distributions of 0.5 µm SOI LSIs
Toshiaki IWAMATSU Takashi IPPOSHI Yasuo YAMAGUCHI Kimio UEDA Koichiro MASHIKO Shigeto MAEGAWA Yasuo INOUE Tadashi HIRAO Tdashi NISHIMURA Akihiko YASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 464-471
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOISIMOXdivideradderhigh-speedlow voltage
 Summary | Full Text:PDF(735.3KB)

Integration of a Power Supply for System-on-Chip
Satoshi MATSUMOTO Masato MINO Toshiaki YACHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1997/02/25
Vol. E80-A  No. 2 ; pp. 276-282
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
Category: 
Keyword: 
power supplysystem on chippower ICSOIthin-film magnetic device
 Summary | Full Text:PDF(544.2KB)

Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability
Hitoshi SUMIDA Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 593-596
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
LIGBTSOIblocking capabilitycollector-short regionleakage current
 Summary | Full Text:PDF(378.4KB)

A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit
Yusuke OHTOMO Masafumi NOGAWA Masayuki INO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 524-529
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
CMOSinterfacehigh-speedactive-pull-upSOI
 Summary | Full Text:PDF(540.9KB)

Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate
Hiroshi ITO Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 185-191
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: SOI & Material Characterization
Keyword: 
leak currentthreshold voltage shiftSOICMOSinverter chain
 Summary | Full Text:PDF(556.8KB)

Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
Seiji FUJINO Kazuhiro TSURUTA Akiyoshi ASAI Tadashi HATTORI Yoshihiro HAMAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/12/25
Vol. E78-C  No. 12 ; pp. 1773-1778
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SOIthreshold voltagewafer direct bondingfloating back gateelectric charge injectionring oscillator
 Summary | Full Text:PDF(647.6KB)

Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
Shoichi MASUI Tatsuo NAKAJIMA Keisuke KAWAMURA Takayuki YANO Isao HAMAGUCHI Masaharu TACHIMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1263-1272
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SOIfixed oxide chargeinterface trapparasitic capacitancesubthreshold slope
 Summary | Full Text:PDF(928.4KB)

Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
Yasuo YAMAGUCHI Jun TAKAHASHI Takehisa YAMAGUCHI Tomohisa WADA Toshiaki IWAMATSU Hans-Oliver JOACHIM Yasuo INOUE Tadashi NISHIMURA Natsuro TSUBOUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/25
Vol. E78-C  No. 7 ; pp. 812-817
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
SOISIMOXSRAMlow-voltage operationback-gate bias effect
 Summary | Full Text:PDF(695.1KB)

High-Speed and Low-Power n+-p+ Double-Gate SOI CMOS
Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4 ; pp. 360-367
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
MOSFETSOIdouble-gatehigh-speedlow-powerthreshold voltage
 Summary | Full Text:PDF(768.9KB)

The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film
Hitoshi SUMIDA Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1464-1471
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SOIlateral IGBTsubstrate biasblocking capabilityswitching characteristics
 Summary | Full Text:PDF(563.4KB)

Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications
Kunihiro ASADA Mike LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/07/25
Vol. E77-C  No. 7 ; pp. 1131-1137
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SOIdeep submicroncharging and discharging energyrecycled energyTDGC modeltransient device simulationfinite element methodfuture MOS LSI
 Summary | Full Text:PDF(580.2KB)

Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding
Takao ABE Yasuyuki NAKAZATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 342-349
Type of Manuscript:  INVITED PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: 
Keyword: 
SOISi on quartzSOSwafer bondingdislocation-freesilicon layer
 Summary | Full Text:PDF(1.1MB)

A New Proposal for Inverter Delay Improvement on CMOS/SOI Future Technology
M.O. LEE Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/10/25
Vol. E76-C  No. 10 ; pp. 1515-1522
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
TPD time-dependent gate capacitance(TDGC)SOIdeep sub-micrometerCMOSpoly-si gate thickness(tm)ring oscillator
 Summary | Full Text:PDF(590.3KB)

Process and Device Technologies of CMOS Devices for Low-Voltage Operation
Masakazu KAKUMU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/25
Vol. E76-C  No. 5 ; pp. 672-680
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits)
Category: 
Keyword: 
CMOSSOISIMOXMOSFETlow-voltagelow-temperaturethreshold voltage high-speedpower-supply voltagesubthreshold currentcircuit performancepower dissipation
 Summary | Full Text:PDF(687.8KB)

An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4-µm Gate Ultrathin-Film SIMOX Technology
Yuichi KADO Masao SUZUKI Keiichi KOIKE Yasuhisa OMURA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 562-571
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
integrated electronicssemiconductor materials and devicesCMOSSOISIMOXphase locked loop
 Summary | Full Text:PDF(955.5KB)

Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface
Nobuo SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1430-1437
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword: 
laser-recrystallizationSOIinterface-charge
 Summary | Full Text:PDF(646.3KB)

Bonded SOI with Polish-Stopper Technology for ULSI
Yoshihiro MIYAZAWA Makoto HASHIMOTO Naoki NAGASHIMA Hiroshi SATO Muneharu SHIMANOE Katsunori SENO Fumio MIYAJI Takeshi MATSUSHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1522-1528
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI LSIs
Keyword: 
SOIwafer bondingpolish-stopper256 kb SRAM 4 Mb SRAM cell
 Summary | Full Text:PDF(929.1KB)

Mixed-Signal IC (MSIC) for New SOI-Based Structure
Takeshi MATSUTANI Toshiharu TAKARAMOTO Takao MIURA Syuichi HARAJIRI Tsunenori YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1515-1521
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI LSIs
Keyword: 
MSICSOIrectifierdelta-sigma A/D converter
 Summary | Full Text:PDF(509.5KB)

Analytical Modeling of Dynamic Performance of Deep Sub-micron SOI/SIMOX Based on Current-Delay Product
Minoru FUJISHIMA Makoto IKEDA Kunihiro ASADA Yasuhisa OMURA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1506-1514
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
CMOSSOIdeep-submicronmodelingring oscillator
 Summary | Full Text:PDF(646.4KB)

Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA Sadao NAKASHIMA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1491-1497
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
CMOSSOISIMOXultrathinhigh speed
 Summary | Full Text:PDF(604.4KB)

Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs
Kazuya MATSUZAWA Minoru TAKAHASHI Makoto YOSHIMI Naoyuki SHIGYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1477-1483
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
SOIenergy transportvelocity overshoothot carrier
 Summary | Full Text:PDF(532KB)

Bevel Style High Voltage Power Transistor for Power IC
Kazuhiro TSURUTA Mitsutaka KATADA Seiji FUJINO Tadashi HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1459-1464
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
power transistorwafer direct bondingbeveled structurehigh voltageSOI
 Summary | Full Text:PDF(546.9KB)

SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
Sadao NAKASHIMA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1415-1420
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword: 
SIMOXimplantationdislocationoxygenSOI
 Summary | Full Text:PDF(804.4KB)

ULSI Technology Trends toward 256K/1G DRAMs
Masahiro KASHIWAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/25
Vol. E75-C  No. 11 ; pp. 1304-1312
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
ULSIDRAMtechnology trendSOIvertical processing
 Summary | Full Text:PDF(1MB)

Contactless Evaluation Using a Laser/Microwave Method for the Silicon-on-Insulator Made by Wafer Bonding
Akira USAMI Takahisa NAKAI Hideki FUJIWARA Shun-ichiro ISHIGAMI Takao WADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1043-1048
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
SOIwafer bondingvoidlaser/microwave methodlifetime
 Summary | Full Text:PDF(598.6KB)