IEICE Trans

Keyword : SOI MOSFET

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement — Takayuki MORI Jiro IDA Hiroki ENDO
Publication: Publication Date: 2020/10/01 Vol. E103-C No. 10 ; pp. 533-542 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: feedback, floating body effect, pulse measurement, SOI MOSFET, steep subthreshold slope, thyristor, transient,
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SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System Yasushi IGARASHI Tadashi CHIBA Shin-ichi O'UCHI Meishoku MASAHARA Kunihiro SAKAMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2014/03/01 Vol. E97-A No. 3 ; pp. 741-748 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: voltage multiplier, RF-to-DC converter, SOI MOSFET, self-control of body bias,
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Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/05/01 Vol. E85-C No. 5 ; pp. 1073-1078 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices) Category: Keyword: SOI MOSFET, triangular wire, short channel effect, subthreshold factor, DIBL,
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Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects Rimon IKENO Hiroshi ITO Kunihiro ASADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 ; pp. 806-811 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: SOI MOSFET, device simulation, subthreshold characteristics, quantum mechanical effects, parameter fitting, substrate bias,
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