Keyword : SOI MOSFET

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —
Takayuki MORI Jiro IDA Hiroki ENDO 
Publication Date: 2020/10/01
Vol. E103-C  No. 10 ; pp. 533-542
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
feedbackfloating body effectpulse measurementSOI MOSFETsteep subthreshold slopethyristortransient
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SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System
Yasushi IGARASHI Tadashi CHIBA Shin-ichi O'UCHI Meishoku MASAHARA Kunihiro SAKAMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/03/01
Vol. E97-A  No. 3 ; pp. 741-748
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
voltage multiplierRF-to-DC converterSOI MOSFETself-control of body bias
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Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1073-1078
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
SOI MOSFETtriangular wireshort channel effectsubthreshold factorDIBL
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Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
Rimon IKENO Hiroshi ITO Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 806-811
Type of Manuscript:  PAPER
Category: Electronic Circuits
SOI MOSFETdevice simulationsubthreshold characteristicsquantum mechanical effectsparameter fittingsubstrate bias
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