Keyword : SOI CMOS

A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS
Cuilin CHEN Tsuyoshi SUGIURA Toshihiko YOSHIMASU 
Publication Date: 2020/04/01
Vol. E103-C  No. 4 ; pp. 153-160
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: Microwaves, Millimeter-Waves
adaptive biashigh back-off efficiencyhigh linearitySOI CMOS
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A Sub 1-V L-Band Low Noise Amplifier in SOI CMOS
Hiroshi KOMURASAKI Hisayasu SATO Kazuya YAMAMOTO Kimio UEDA Shigenobu MAEDA Yasuo YAMAGUCHI Nagisa SASAKI Takahiro MIKI Yasutaka HORIBA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2000/02/25
Vol. E83-A  No. 2 ; pp. 220-227
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
SOI CMOSlow noise amplifierL bandlow voltageRF
 Summary | Full Text:PDF