Keyword : SIMS

Theoretical and Experimental Approaches to Select Resistive Switching Material
Takeki NINOMIYA Zhiqiang WEI Shinichi YONEDA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/01/01
Vol. E98-C  No. 1 ; pp. 62-64
Type of Manuscript:  BRIEF PAPER
Category: Electronic Materials
Keyword: 
Resistive switching memory, conductive filament, First principles calculation, SIMS, oxygen diffusion, 
 Summary | Full Text:PDF
Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFET, VT-VSUB, substrate bias, p-GaN, SIMS, 
 Summary | Full Text:PDF
Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 17-23
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectrics, HfO2, ALD, TEM, SIMS, XPS, FT-IR ATR, EXAFS, 
 Summary | Full Text:PDF