Keyword : SIMS


Theoretical and Experimental Approaches to Select Resistive Switching Material
Takeki NINOMIYA Zhiqiang WEI Shinichi YONEDA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/01/01
Vol. E98-C  No. 1 ; pp. 62-64
Type of Manuscript:  BRIEF PAPER
Category: Electronic Materials
Keyword: 
Resistive switching memoryconductive filamentFirst principles calculationSIMSoxygen diffusion
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Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETVT-VSUBsubstrate biasp-GaNSIMS
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Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 17-23
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricsHfO2ALDTEMSIMSXPSFT-IR ATREXAFS
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