Keyword : SANOS

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
Hyun Woo KIM Dong Hun KIM Joo Hyung YOU Tae Whan KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 651-653
Type of Manuscript:  BRIEF PAPER
Category: Memory Devices
SANOSSONOScharge transportsilicon nitridestacked tunneling layer
 Summary | Full Text:PDF(508.6KB)