Keyword : Resistive Random Access Memory (ReRAM)


Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5 ; pp. 406-410
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Metal Nano-dots (NDs)Si Oxide (SiOx)MIM DiodesAtomic Force Microscope (AFM)
 Summary | Full Text:PDF

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 702-707
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Si oxidePt electrodeschemical bonding featuresresistance switching
 Summary | Full Text:PDF