Keyword : Random Telegraph Signal (RTS)

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 724-729
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
1/f noiseflicker noiseMOSFETSiON/Poly-Si GateRandom Telegraph Signal (RTS)
 Summary | Full Text:PDF(2.3MB)