Keyword : RF-CMOS


Vdd Gate Biasing RF CMOS Amplifier Design Technique Based on the Effect of Carrier Velocity Saturation
Noboru ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/09/01
Vol. E90-C  No. 9 ; pp. 1702-1707
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices/Circuits
Keyword: 
RF-CMOSamplifiersgate bias circuitscarrier velocity saturation
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