Keyword : PECVD


Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate
Gong-Ru LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C  No. 2 ; pp. 173-180
Type of Manuscript:  INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
Si-ion-implantationPECVDnanocrystalsiliconSi-rich SiOxnano-pyramidsnano-pillarsMOSLEDelectroluminescenceFowler-Nordheim tunneling
 Summary | Full Text:PDF(1MB)

Improvement of PECVD-SiNx for TFT Gate Insulator by Controlling Ion Bombardment Energy
Yasuhiko KASAMA Tadahiro OHMI Koichi FUKUDA Hirobumi FUKUI Chisato IWASAKI Shoichi ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3 ; pp. 398-406
Type of Manuscript:  Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: Device Issues
Keyword: 
TFTgate insulatorPECVDion fluxion energy
 Summary | Full Text:PDF(1MB)

Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation
Kimiaki SHIMOKAWA Takashi USAMI Masaki YOSHIMARU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 473-479
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
water desorptionoxidePECVDporehot-carrierinterlayer
 Summary | Full Text:PDF(592.1KB)