Keyword : PAE


Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Masato SEKI Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
microwaveclass-F amplifierInGaP/GaAs HBThigh-efficiencyPAEbase-collector capacitance
 Summary | Full Text:PDF

Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4 ; pp. 455-465
Type of Manuscript:  Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistorSiGe HBTSiGe:Cpower amplifierACPRPAE
 Summary | Full Text:PDF