Keyword : OBIC


A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
Satoshi IKEDA Hidetsugu UCHIDA Norio HIRASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1134-1137
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOS capacitorgate oxideOBICbreakdown spotXTEM
 Summary | Full Text:PDF(1.7MB)

Optical Beam Induced Current Technique as a Failure Analysis Tool of EPROMs
Jun SATOH Hiroshi NAMBA Tadashi KIKUCHI Kenichi YAMADA Hidetoshi YOSHIOKA Miki TANAKA Ken SHONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/04/25
Vol. E77-C  No. 4 ; pp. 574-578
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Failure Analysis)
Category: 
Keyword: 
data retention failureEMSEPROMfailure analysisOBIC
 Summary | Full Text:PDF(785.4KB)

An Analysis of and a Method of Enhancing the Intensity of OBIRCH Signal for Defects Observation in VLSI Metal Interconnections
Naoki KAWAMURA Tomoaki SAKAI Masakazu SHIMAYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/04/25
Vol. E77-C  No. 4 ; pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Failure Analysis)
Category: 
Keyword: 
OBIRCHVLSI interconnectionfailure analysisdefect observationlaser scanning microscopeOBIC
 Summary | Full Text:PDF(544.5KB)