Keyword : NDR


Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor
Tetsuya UEMURA Toshio BABA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7 ; pp. 1486-1490
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
multiple-valued logicT-gateflip floptunnel transistorNDR
 Summary | Full Text:PDF(389.6KB)

GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV Dimitris PAVLIDIS William Earl SUTTON Edwin PINER Joan REDWING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1462-1469
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNTHzGunnNDR
 Summary | Full Text:PDF(1.3MB)