Keyword : N-doped LaB6


The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering
Kyung Eun PARK Shun-ichiro OHMI 
Publication:   
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
N-doped LaB6MOS diodeSchottky diodeeffective work functionRF sputtering
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Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
Yasutaka MAEDA Mizuha HIROKI Shun-ichiro OHMI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 323-327
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETbottom-contact electrodessurface treatmentelectron injection
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Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
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