Keyword : MRAM


Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
Ryusuke NEBASHI Noboru SAKIMURA Tadahiko SUGIBAYASHI Naoki KASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/04/01
Vol. E92-C  No. 4 ; pp. 417-422
Type of Manuscript:  Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era)
Category: 
Keyword: 
MRAMembedded memorySoCsystem LSI
 Summary | Full Text:PDF

MRAM Applications Using Unlimited Write Endurance
Tadahiko SUGIBAYASHI Takeshi HONDA Noboru SAKIMURA Shuichi TAHARA Naoki KASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10 ; pp. 1936-1940
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market)
Category: Next-Generation Memory for SoC
Keyword: 
MRAMdrive recorderasynchronous SRAMpseudo SRAMdemo system
 Summary | Full Text:PDF

Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode
Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Naoki KASAI Hiromitsu HADA Shu-ichi TAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/02/01
Vol. E90-C  No. 2 ; pp. 531-535
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
MRAMtoggleintermittent failure
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TMR-Based Logic-in-Memory Circuit for Low-Power VLSI
Akira MOCHIZUKI Hiromitsu KIMURA Mitsuru IBUKI Takahiro HANYU 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2005/06/01
Vol. E88-A  No. 6 ; pp. 1408-1415
Type of Manuscript:  Special Section PAPER (Special Section on Papers Selected from 2004 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2004))
Category: 
Keyword: 
MRAMTMR devicedynamic current-mode logiclogic functionsum of absolute differences
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MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current
Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Hideaki NUMATA Sadahiko MIURA Hiromitsu HADA Shuichi TAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/04/01
Vol. E86-C  No. 4 ; pp. 612-617
Type of Manuscript:  Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)
Category: Circuit Design
Keyword: 
MRAMmagnetization reversal currentthermal-variation compensation
 Summary | Full Text:PDF