Keyword : MOVPE


Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
Ryo NAKAO Masakazu ARAI Takaaki KAKITSUKA Shinji MATSUO 
Publication:   
Publication Date: 2018/07/01
Vol. E101-C  No. 7 ; pp. 537-544
Type of Manuscript:  INVITED PAPER (Special Section on Distinguished Papers in Photonics)
Category: 
Keyword: 
heteroepitaxial growthGe bufferMOVPESi substrate
 Summary | Full Text:PDF(4.5MB)

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2077-2081
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNheterostructureMOVPEuniformitybowing
 Summary | Full Text:PDF(970.5KB)

The Evolution of Nitride-Based Light-Emitting Devices
Isamu AKASAKI Satoshi KAMIYAMA Hiroshi AMANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1 ; pp. 2-9
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
nitride semiconductorsMOVPElow-temperature buffer layerconductivity controlblue light-emitting devices
 Summary | Full Text:PDF(737KB)

Spot-Size-Converter Integrated Laser Diode with Waveguide Width Abruptly Expanded Structure
Hiroyuki YAMAZAKI Yuji FURUSHIMA Yasutaka SAKATA Yuichiro OKUNUKI Yoshihiro SASAKI Keiro KOMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/25
Vol. E83-C  No. 6 ; pp. 838-844
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: Semiconductor Lasers
Keyword: 
laser diodeMOVPEspot size converteraccess networkcoupling loss
 Summary | Full Text:PDF(847.1KB)

Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer
Masayuki YAMAGUCHI Koji KUDO Hiroyuki YAMAZAKI Masashige ISHIZAKA Tatsuya SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/08/25
Vol. E81-C  No. 8 ; pp. 1219-1224
Type of Manuscript:  INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)
Category: Active Devices for Photonic Networks
Keyword: 
distributed feedback laser diodeWDMgratingEB lithographyoptical modulatorMOVPE
 Summary | Full Text:PDF(570.7KB)

Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE
Yukio KATOH Koji YAMADA Tatsuo KUNII Yoh OGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/01/25
Vol. E80-C  No. 1 ; pp. 69-73
Type of Manuscript:  Special Section PAPER (Special Issue on Devices, Packaging Technology, and Subsystems for the Optical Access Network)
Category: 
Keyword: 
WDMintegrated laserDBR laserEA-modulatorMQWselective area growthMOVPE
 Summary | Full Text:PDF(408.6KB)

InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot(TSR-QD)Technology
Yuji AWANO Yoshiki SAKUMA Yoshihiro SUGIYAMA Takashi SEKIGUCHI Shunichi MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1557-1561
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
nanometer technologyquantum dotMOVPEcathodoluminescencephotoluminescenceself-organization
 Summary | Full Text:PDF(716.3KB)

Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers
Jiro TEMMYO Eiichi KURAMOCHI Mitsuru SUGO Teruhiko NISHIYA Richard NOTZEL Toshiaki TAMAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1495-1502
Type of Manuscript:  INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
self-organizationstrained InGaAs quantum diskMOVPEquantum disk laser
 Summary | Full Text:PDF(873.2KB)

Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1171-1181
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBTMOVPEZn diffusionabrupt emittergraded basehot electron injectionnonequilibrium transportcurrent blocking effectlateral down-scalingemitter size effect
 Summary | Full Text:PDF(999.1KB)

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxyatomic layer epitaxy (ALE)MOVPEpulsed-jet epitaxyGaAsSiO2 mask
 Summary | Full Text:PDF(941.4KB)

Nonalloyed Ohmic Contacts for HEMTs Using n+-lnGaAs Layers Grown by MOVPE
Mizuhisa NIHEI Naoki HARA Haruyoshi SUEHIRO Shigeru KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1431-1436
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
nonalloyed ohmic contactn+-InGaAsMOVPEHEMT
 Summary | Full Text:PDF(576.3KB)