Keyword : MOSFETs


Equivalent Noise Temperature Representation for Scaled MOSFETs
Hiroshi SHIMOMURA Kuniyuki KAKUSHIMA Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10 ; pp. 1550-1552
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETsthermal noiseequivalent noise temperature
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Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs
Hiroshi SHIMOMURA Kuniyuki KAKUSHIMA Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 678-684
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETsthermal noisenoise figurenoise parameters
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A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
Yueh-Hua WANG Ming-Hsiang CHO Lin-Kun WU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C  No. 9 ; pp. 1157-1162
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category: 
Keyword: 
de-embeddingmicrowaveMOSFETsnoiseRFsilicon
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Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancementGaNMOSFETsHfO2
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On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs
Ming-Ta YANG Yo-Jen WANG Patricia Pei-Chen HO Tzu-Jin YEH Darryl Chih-Wei KUO Chin-Wei KUO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 838-844
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
BSIM3bulk effectcompact modelMOSFETsradio frequency
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Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs
Eric CASSAN Sylvie GALDIN Philippe DOLLFUS Patrice HESTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1194-1202
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
MOSFETsdownsizinggate oxidedirect-tunnelinghot carriersmodeling
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RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Scott ROY Sava KAYA Asen ASENOV John R. BARKER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1224-1227
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
device simulationMonte CarloMOSFETsRF
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