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| Keyword : MOSFET
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Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement
Katsuhiro TSUJI Kazuo TERADA Ryota KIKUCHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C
No. 11 ;
pp. 1117-1123
Type of Manuscript:
PAPER
Category: Semiconductor Materials and Devices
Keyword:
MOSFET, C-V curve, CBCM, variability, | | | Summary | Full Text:PDF(1.8MB) | |
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Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH Koji SAKUI Yukio YASUDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C
No. 5 ;
pp. 557-562
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword:
vertical MOSFET, 3D structured device, MOSFET, LSI, | | | Summary | Full Text:PDF(7.8MB) | |
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Gate-Extension Overlap Control by Sb Tilt Implantation
Kentaro SHIBAHARA Nobuhide MAEDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5 ;
pp. 973-977
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword:
MOSFET, extension, gate, overlap, tilt implantation, Sb, | | | Summary | Full Text:PDF(533KB) | |
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A 380-MHz CMOS Linear-in-dB Variable Gain Amplifier with Gain Compensation Techniques for CDMA Systems
Osamu WATANABE Mitsuyuki ASHIDA Tetsuro ITAKURA Shoji OTAKA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C
No. 6 ;
pp. 1069-1076
Type of Manuscript:
Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category:
Keyword:
variable gain amplifier, VGA, gain compensation, temperature compensation, linear-in-dB characteristics, square circuit, MOSFET, square-law region, exponential-law region, CDMA, | | | Summary | Full Text:PDF(587.4KB) | |
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Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model
Daijiro SUMINO Yasuhisa OMURA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C
No. 7 ;
pp. 1443-1450
Type of Manuscript:
Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category:
Keyword:
thermal noise, silicon-on-insulator, MOSFET, transmission-line model, | | | Summary | Full Text:PDF(846.9KB) | |
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Design and Simulation of 4Q-Multiplier Using Linear and Saturation Regions of MOSFET Complementally
Tsutomu SUZUKI Takao OURA Teru YONEYAMA Hideki ASAI | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/06/01
Vol. E85-A
No. 6 ;
pp. 1242-1248
Type of Manuscript:
Special Section PAPER (Special Section on Papers Selected from 2001 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2001))
Category:
Keyword:
4Q-Multiplier, MOSFET, linear region, saturation region, analog circuit, | | | Summary | Full Text:PDF(642.3KB) | |
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Operational Transconductance Amplifier with Rail-to-Rail Input Stage Using Single Channel Type MOSFETs
Takahide SATO Shigetaka TAKAGI | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/02/01
Vol. E85-A
No. 2 ;
pp. 354-359
Type of Manuscript:
Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category:
Keyword:
rail-to-rail operation, OTA, MOSFET, operation region, | | | Summary | Full Text:PDF(336.4KB) | |
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Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
Ken UCHIDA Junji KOGA Ryuji OHBA Akira TORIUMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C
No. 8 ;
pp. 1066-1070
Type of Manuscript:
Special Section PAPER (Special Issue on Silicon Nanodevices)
Category:
Keyword:
single-electron, tunneling, MOSFET, power, | | | Summary | Full Text:PDF(718.1KB) | |
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Statistical Modeling of Device Characteristics with Systematic Variability
Kenichi OKADA Hidetoshi ONODERA | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A
No. 2 ;
pp. 529-536
Type of Manuscript:
Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category:
Keyword:
MOSFET, variability, systematic, stochastic, | | | Summary | Full Text:PDF(325.2KB) | |
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Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH Tohru MOGAMI Haruo KATO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C
No. 7 ;
pp. 893-898
Type of Manuscript:
Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword:
SOI, MOSFET, floating body effect, simulation, applicable voltage, | | | Summary | Full Text:PDF(491.5KB) | |
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Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts
Yasuhisa OMURA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C
No. 3 ;
pp. 394-406
Type of Manuscript:
INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
Keyword:
SOI, SIMOX, MOSFET, down-scaling, ultra-thin, | | | Summary | Full Text:PDF(984.7KB) | |
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Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90 and 45
Takashi OHZONE Naoko MATSUYAMA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C
No. 2 ;
pp. 172-178
Type of Manuscript:
Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword:
MOSFET, electrical characteristics, 45 CMOSFET, | | | Summary | Full Text:PDF(560.5KB) | |
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C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2
Takashi OHZONE Takashi HORI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/06/25
Vol. E77-C
No. 6 ;
pp. 952-959
Type of Manuscript:
PAPER
Category: Integrated Electronics
Keyword:
MOSFET, Si-implantation, EEPROM, | | | Summary | Full Text:PDF(684.1KB) | |
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Process and Device Technologies of CMOS Devices for Low-Voltage Operation
Masakazu KAKUMU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/25
Vol. E76-C
No. 5 ;
pp. 672-680
Type of Manuscript:
INVITED PAPER (Special Section on Low-Power and Low-Voltage Integrated Circuits)
Category:
Keyword:
CMOS, SOI, SIMOX, MOSFET, low-voltage, low-temperature, threshold voltage high-speed, power-supply voltage, subthreshold current, circuit performance, power dissipation, | | | Summary | Full Text:PDF(687.8KB) | |
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Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
Laredj BELABAS Nobuo FUJII Shigetaka TAKAGI | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1993/02/25
Vol. E76-A
No. 2 ;
pp. 193-203
Type of Manuscript:
Special Section PAPER (Special Section on High-Speed Analog Circuits and Signal Processing)
Category:
Keyword:
MOSFET, high frequency model, mobility, | | | Summary | Full Text:PDF(635.5KB) | |
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CMOSFET