Keyword : MONOS

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10 ; pp. 928-933
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MONOS, archive memories, charge trap memories, first principals calculation, 
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An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memory, MONOS, SiN, first principles calculation, charge trap memory, 
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Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate
Kuk-Hwan KIM Hyunjin LEE Yang-Kyu CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 578-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
MONOS, SONOS, Fowler-Nordheim tunneling, flash memory, asymmetric double gate, nonvolatile memory, 
 Summary | Full Text:PDF