Keyword : MISFET


Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation
Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 640-645
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
high-k dielectricsaluminum oxidereliabilityMISFET
 Summary | Full Text:PDF

RF Performance of Diamond Surface-Channel Field-Effect Transistors
Hitoshi UMEZAWA Shingo MIYAMOTO Hiroki MATSUDAIRA Hiroaki ISHIZAKA Kwang-Soup SONG Minoru TACHIKI Hiroshi KAWARADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1949-1954
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
diamondhydrogen-terminated surface channelMESFETMISFETcut-off frequencymobilityCaF2
 Summary | Full Text:PDF

Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer
Hiroshi TAKAHASHI Masatsugu YAMADA Yong-Gui XIE Seiya KASAI Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1344-1349
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InPMISFETXPSC-V
 Summary | Full Text:PDF