Keyword : MFSFET


Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes
Min Gee KIM Masakazu KATAOKA Rengie Mark D. MAILIG Shun-ichiro OHMI 
Publication:   
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 280-285
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
ferroelectricsnondoped HfO2MFSFETnonvolatile memory
 Summary | Full Text:PDF

Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricMFSFETSrBi2Ta2O9Si non-volatile memorymemory
 Summary | Full Text:PDF