Keyword : MESFET


Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
Jae-Gil LEE Chun-Hyung CHO Ho-Young CHA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 842-845
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
buried gatefield plateMESFETsilicon carbide
 Summary | Full Text:PDF(405.2KB)

Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique
Masahiro NAKAYAMA Shinichi NARITA Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7 ; pp. 1509-1515
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
Monte CarloGaAsMESFETnoise figurenoise generationelectron velocity
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RF Performance of Diamond Surface-Channel Field-Effect Transistors
Hitoshi UMEZAWA Shingo MIYAMOTO Hiroki MATSUDAIRA Hiroaki ISHIZAKA Kwang-Soup SONG Minoru TACHIKI Hiroshi KAWARADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1949-1954
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
diamondhydrogen-terminated surface channelMESFETMISFETcut-off frequencymobilityCaF2
 Summary | Full Text:PDF(730.1KB)

Determination of Small-Signal Parameters and Noise Figures of MESFET's by Physics-Based Circuit Simulator Employing Monte Carlo Technique
Takao ISHII Masahiro NAKAYAMA Teruyuki TAKEI Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8 ; pp. 1472-1479
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
Monte-Carlo simulationsmall signal parameternoise figureheat generationMESFET
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A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process
Masashi NAKATSUGAWA Masahiro MURAGUCHI Yo YAMAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 1981-1989
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
linearized amplifierMMICMESFETself-alignment/selective ion-implantation processlow-distortion
 Summary | Full Text:PDF(1.2MB)

A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias
Jong-Sik LIM Byung-Sung KIM Sangwook NAM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/03/01
Vol. E85-C  No. 3 ; pp. 839-846
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
small signal modelextrinsic resistancesMESFETHEMTs
 Summary | Full Text:PDF(543.1KB)

Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications
Yoshiko Matsuo IKEDA Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Masakatsu MIHARA Misao YOSHIMURA Yoshikazu TANABE Keiji OYA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1086-1091
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
gallium arsenidelinear power amplifiersingle voltage supplyMESFETISMETC
 Summary | Full Text:PDF(2.7MB)

Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF(781KB)

A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1624-1627
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision ICMESFETsuper-dynamic D-FFwideband amplifier
 Summary | Full Text:PDF(272.4KB)

Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
 Summary | Full Text:PDF(484.8KB)

Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
Eiichi SANO Yutaka MATSUOKA Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1182-1188
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
high-speed ICamplifierflip-flopHBTMESFEToptical communication
 Summary | Full Text:PDF(518.8KB)

A GaAs Single Voltage Controlled RF Switch IC
Kazuo MIYATSUJI Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 931-935
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
GaAsMESFETswitchBST
 Summary | Full Text:PDF(351.8KB)

Design of a 3.2 GHz 50 mW 0.5 µm GaAs PLL-Based Clock Generator with 1 V Power Supply
Tadayoshi ENOMOTO Toshiyuki OKUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/12/25
Vol. E77-C  No. 12 ; pp. 1957-1965
Type of Manuscript:  Special Section PAPER (Special Issue on Multimedia, Analog and Processing LSIs)
Category: Processor Interfaces
Keyword: 
phase-locked loop (PLL)clock pulse generator (CG)voltage controlled ring oscillater (VCO)VCO gainGaAsMESFETDCFL circuitpull-in frequencypull-in rangepull-in timelock rangelock timelocked state
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A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones
Shigeyuki MURAI Tetsuro SAWAI Tsutomu YAMAGUCHI Yasoo HARADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6 ; pp. 901-906
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
medium-power amplifierMESFETMMIC pre-amplifierlow-power supplyhigh power-added efficiency
 Summary | Full Text:PDF(511.2KB)