Keyword : LOCOS


Fabrication of 100 nm Width Fine Active-Region Using LOCOS Isolation
Daisuke NOTSU Naoya IKECHI Yasuyuki AOKI Nobuyuki KAWAKAMI Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1119-1124
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
LOCOSjunction leakage currentPSLisolationbird's beak
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Evaluation of Plasma Damage to Gate Oxide
Yukiharu URAOKA Koji ERIGUCHI Tokuhiko TAMAKI Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
QBDgate oxideplasmareliabilitydamagephoton emissionLOCOSthinning
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A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
Yukiharu URAOKA Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 519-524
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
reliabilityphoton emissionTDDBgate oxideLOCOS
 Summary | Full Text:PDF

Half-Micron LOCOS Isolation Using High Energy Ion Implantation
Koji SUZUKI Kazunobu MAMENO Hideharu NAGASAWA Atsuhiro NISHIDA Hideaki FUJIWARA Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 972-977
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ion implantationLOCOSisolationchannel stopITF
 Summary | Full Text:PDF