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Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8 ;
pp. 1310-1316
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword:
InP, InGaAs, HBT, turn-on voltage, | | | Summary | Full Text:PDF | |
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InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU Masami TOKUMITSU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5 ;
pp. 917-922
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword:
HEMT, InP, cutoff frequency, OEIC, | | | Summary | Full Text:PDF | |
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Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C
No. 8 ;
pp. 1259-1262
Type of Manuscript:
LETTER
Category: Semiconductor Materials and Devices
Keyword:
InGaAs, InP, capless HEMTs, | | | Summary | Full Text:PDF | |
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Optoelectronic/Photonic Integrated Circuits on InP between Technological Feasibility and Commercial Success
Ronald KAISER Helmut HEIDRICH | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2002/04/01
Vol. E85-C
No. 4 ;
pp. 970-981
Type of Manuscript:
INVITED PAPER (Special Issue on Recent Progress of Integrated Photonic Devices)
Category: Active Devices
Keyword:
integrated circuit, OEICs, PICs, InP, | | | Summary | Full Text:PDF | |
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Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer
Hiroshi TAKAHASHI Masatsugu YAMADA Yong-Gui XIE Seiya KASAI Hideki HASEGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1344-1349
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword:
InP, MISFET, XPS, C-V, | | | Summary | Full Text:PDF | |
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High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C
No. 11 ;
pp. 2000-2006
Type of Manuscript:
Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword:
InP, HBT, amplifier, flip-flop, PLL, | | | Summary | Full Text:PDF | |
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InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
Eiichi SANO Yasuro YAMANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C
No. 11 ;
pp. 1879-1885
Type of Manuscript:
INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
Keyword:
InP, HEMT, analog IC, digital IC, packaging, | | | Summary | Full Text:PDF | |
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