Keyword : InP HEMT


Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifierGaN HEMTInP HEMTlow noise amplifier
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300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 528-534
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
InP HEMTsub millimeter-waveon-wafer TRL calibration
 Summary | Full Text:PDF

100-GHz Ultra-Broadband Distributed Amplifier in Chip-Size Package
Satoshi MASUDA Kazuhiko KOBAYASHI Hidehiko KIRA Masayuki KITAJIMA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Vol. E87-C  No. 7 ; pp. 1197-1203
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
chip-size package (CSP)distributed amplifierinverted microstrip linegrounded coplanar waveguideflip-chipInP HEMTmillimeter-wavelead-free solder
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Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1916-1922
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
InP HEMTMUXDEMUXD-FFamplifierultra high speedoptical communication system
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1 Tbit/s (25 43 Gbit/s) Field Trial Using 43-Gbit/s/ch OTN Interface Prototype
Shoichiro KUWAHARA Kazushige YONENAGA Yutaka MIYAMOTO Yoshiaki KISAKA Kenji SATO Akira HIRANO Takashi ONO Akihiko MATSUURA Masahito TOMIZAWA Tomoyoshi KATAOKA Yasuhiko TADA Hiromu TOBA Kazuo HAGIMOTO Nobuhiro HIRAYAMA Hirotaka ASAI 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2002/02/01
Vol. E85-B  No. 2 ; pp. 470-477
Type of Manuscript:  Special Section PAPER (Special Issue on 40 Gbit/s Optical Transmission Technologies)
Category: 
Keyword: 
OTNmultiple clientsFECInP HEMTUTC-PD
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Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
Takuo KASHIWA Kazuya YAMAMOTO Takayuki KATOH Takao ISHIDA Takahide ISHIKAWA Yasuo MITSUI Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/10/25
Vol. E82-C  No. 10 ; pp. 1831-1838
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
resistive mixerLO powerconversion lossInP HEMTconductance
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Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit
Koichi MURATA Taiichi OTSUJI Takatomo ENOKI Yohtaro UMEDA Mikio YONEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 456-464
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
exclusive OR/NORclock recovery circuitInP HEMT
 Summary | Full Text:PDF