Keyword : InGaP


Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistorreliabilityrapid thermal annealingGaAsInGaP
 Summary | Full Text:PDF

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2004-2009
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBTInGaPGaAsledgecapacitorbase resistancerecombination
 Summary | Full Text:PDF

High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
Akio WAKEJIMA Kazuki OTA Kohji MATSUNAGA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 2041-2045
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
field-modulating plateInGaPfield effect transistor (FET)intermodulation distortion
 Summary | Full Text:PDF

HBT Collector Characterization by the Spectral Photocurrent Technique
Fritz SCHUERMEYER Peter J. ZAMPARDI Sharon FITZSIMMONS Roger E. WELSER Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1383-1388
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
photoluminescenceHBTGaAsAlGaAsInGaP
 Summary | Full Text:PDF

An InGaP/GaAs Composite Channel FET for High Power Device Applications
Shigeru NAKAJIMA Ken NAKATA Kunio TANAKA Kenji OTOBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1300-1305
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high power deviceInGaPFETelectron transport
 Summary | Full Text:PDF

High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs
Hsien-Chin CHIU Shih-Cheng YANG Yi-Jen CHAN Hao-Hsiung LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1312-1317
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
DCFETInGaPpowerperformanceRIE
 Summary | Full Text:PDF

0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA Tamio SAITO Hideyuki OIKAWA Yoji OHASHI Yuji AWANO Masayuki ABE Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 876-881
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-waveMMICHEMTInGaPlow noise amplifier
 Summary | Full Text:PDF

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiNInGaPasymmetric LDD structureGaAsMMIC
 Summary | Full Text:PDF