Keyword : InGaP/GaAs HBT

A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs
Yuki TAKAGI Yoichiro TAKAYAMA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/01/01
Vol. E97-C  No. 1 ; pp. 58-64
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
cascode, InGaP/GaAs HBT, microwave power amplifier, 
 Summary | Full Text:PDF
Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Masato SEKI Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
microwave, class-F amplifier, InGaP/GaAs HBT, high-efficiency, PAE, base-collector capacitance, 
 Summary | Full Text:PDF
Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications
Satoshi KURACHI Toshihiko YOSHIMASU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 678-682
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
InGaP/GaAs HBT, VCO, millimeter-wave, low phase noise, 
 Summary | Full Text:PDF
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes
Keiichi MURAYAMA Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1379-1382
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBT, bias circuit, temperature compensation, 
 Summary | Full Text:PDF
Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
Roger E. WELSER Paul M. DELUCA Alexander C. WANG Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1389-1393
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBT, AlGaAs/GaAs HBT, GaInNAs, bipolar transistor, turn-on voltage, 
 Summary | Full Text:PDF