Keyword : InGaAs/InAlAs HEMT

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Issei WATANABE Akira ENDOH Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1251-1257
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
InGaAs/InAlAs HEMTE-band LNA-MMICmaximum oscillation frequencycurrent-gain cutoff frequencyminimum noise figure
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