Keyword : InAlN


Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment
Takuma NAKANO Masamichi AKAZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 686-689
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
InAlNXPSsurface treatmentHFnative oxide
 Summary | Full Text:PDF

Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN-based FETsHEMTsInAlNAlInNAlGaN
 Summary | Full Text:PDF