Keyword : InAlAs


Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
 Summary | Full Text:PDF

Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy
Takeyoshi SUGAYA Tadashi NAKAGAWA Yoshinobu SUGIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1568-1572
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
quantum wireMBEIn GaAsInAlAscompositional control
 Summary | Full Text:PDF

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF