Keyword : HiSIM


Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2017/03/01
Vol. E100-C  No. 3 ; pp. 321-328
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
powerGaN-HEMTsHiSIMfield platecapacitance
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Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency
Takao YAMAMOTO Masataka MIYAKE Uwe FELDMANN Hans JÜRGEN MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10 ; pp. 1021-1027
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
IGBTHiSIMSPICEcompact model
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Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 744-751
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETLDMOSHiSIMtrench-gate MOSFET compact model
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A PN Junction-Current Model for Advanced MOSFET Technologies
Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2009/04/01
Vol. E92-A  No. 4 ; pp. 983-989
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
HiSIMPN junction currentdiode currentsurface potential
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Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8 ; pp. 1379-1381
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
double gate MOSFETHiSIMcircuit simulationvolume inversion
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