Keyword : HfO2


Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate
Tatsuya MEGURO Akito HARA 
Publication:   
Publication Date: 2017/01/01
Vol. E100-C  No. 1 ; pp. 94-100
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-SiTFThigh-kHfO2CMOSglass substrate
 Summary | Full Text:PDF(845.8KB)

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 717-723
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k gate dielectricscapping layerHfO2MgOphotoemission measurements
 Summary | Full Text:PDF(1MB)

SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition
Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 590-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
SONOSSOHOSflash memoryhigh-kHfO2nonvolatile memoryAtomic Layer Deposition
 Summary | Full Text:PDF(1.9MB)

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancementGaNMOSFETsHfO2
 Summary | Full Text:PDF(505.2KB)

Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 17-23
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricsHfO2ALDTEMSIMSXPSFT-IR ATREXAFS
 Summary | Full Text:PDF(2.3MB)

Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 37-43
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κHfO2gate dielectricthermal stability
 Summary | Full Text:PDF(1.2MB)

Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFEThigh-κ gate dielectricHfO2atomic layer depositionlong purgeimpuritygate leakage current
 Summary | Full Text:PDF(1.1MB)