IEICE Trans

Keyword : HfO₂

Low-Temperature Polycrystalline-Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization and Metal/Hafnium Oxide Gate Stack on Nonalkaline Glass Substrate Tatsuya MEGURO Akito HARA
Publication: Publication Date: 2017/01/01 Vol. E100-C No. 1 ; pp. 94-100 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: poly-Si, TFT, high-k, HfO₂, CMOS, glass substrate,
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Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 717-723 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high-k gate dielectrics, capping layer, HfO₂, MgO, photoemission measurements,
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SONOS-Type Flash Memory with HfO₂ Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition Jae Sub OH Kwang Il CHOI Young Su KIM Min Ho KANG Myeong Ho SONG Sung Kyu LIM Dong Eun YOO Jeong Gyu PARK Hi Deok LEE Ga Won LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 ; pp. 590-595 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: SONOS, SOHOS, flash memory, high-k, HfO₂, nonvolatile memory, Atomic Layer Deposition,
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Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 1001-1003 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: enhancement, GaN, MOSFETs, HfO₂,
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Characterization of HfO₂ Films Prepared on Various Surfaces for Gate Dielectrics Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 ; pp. 17-23 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ gate dielectrics, HfO₂, ALD, TEM, SIMS, XPS, FT-IR ATR, EXAFS,
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Electrical Properties of SiN/HfO₂/SiON Gate Stacks with High Thermal Stability Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 ; pp. 37-43 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ, HfO₂, gate dielectric, thermal stability,
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Effect of Purge Time on the Properties of HfO₂ Films Prepared by Atomic Layer Deposition Takaaki KAWAHARA Kazuyoshi TORII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 ; pp. 2-8 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: CMOSFET, high-κ gate dielectric, HfO₂, atomic layer deposition, long purge, impurity, gate leakage current,
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