Keyword : HfOxNy

Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
Shun-ichiro OHMI Tomoki KUROSE Masaki SATOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
electron cyclotron resonancesputteringplasma nitridationpostdeposition annealinghigh-kHfOxNy
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